Friday November 17, 2018 @ 1:00pm

Armstrong Hall 154

Abstract

A major research theme in electronics is to reduce the amount of energy/heat dissipated in a binary operation since that will allow continued downscaling of electronic devices in accordance with Moore’s law. Unlike charge-based CMOS technology, spin-based nanomagnetic technology, that envisages switching the bistable magnetization of a shape anisotropic nanomagnet for a binary operation, has the potential to achieve ultralow energy dissipation because switching does not involve moving electrical charge. However, this has never been realized because most magnet-switching schemes involve generating a current to produce either a magnetic field, or spin-transfer torque, or domain wall motion. Current-induced switching invariably dissipates an exorbitant amount of energy in the switching circuit that nullifies any energy advantage that a magnet may have over a transistor. In this work, Dr. Biswas proposes an extremely energy-efficient non-volatile memory technology where bits are written into cells with voltage generated stress. Dr. Biswas has developed a universal NAND logic device that satisfies the essential characteristics of a Boolean logic gate and a bit comparator, which happens to be all straintronic, yet reconfigurable. This work has wide application in straintrionic spin neuron for image processing, neural computing and hardware-based signal processing and in energy-efficient MRAM technology in a properly scaled architecture.

About the Speaker

Dr. Ayan Kumar Biswas is currently a postdoctoral associate in the Department of Electrical and Computer Engineering at Carnegie Mellon University (CMU), Pittsburgh. He received his Ph.D. from Virginia Commonwealth University (VCU), Richmond, Virginia in 2016 and a Bachelor’s degree from Bangladesh University of Engineering and Technology (BUET), Dhaka, Bangladesh in 2011, both in in Electrical and Electronic Engineering. His research concentrates on the development of energy-efficient nanomagnetic/spintronic technologies beyond complementary metal-oxide-semiconductor (CMOS) technologies for future generation computing. His expertise in the field encompasses both the theory and the experiment of spintronic devices and their integration in existing CMOS circuits.
Dr. Biswas has authored and co-authored 11 journal papers, 8 peer-reviewed conference papers, one book chapter and holds a US-patent. He was awarded VCU school of engineering graduate research award, VCU phi kappa phi scholarship, ECE graduate research award, APS GMAG travel award. He is a reviewer for 5 IEEE journals/conferences.

This will count for ENG09x Technical Seminar credit.